MOSFETs Minimize Gate Charge For Industrial Applications

International Rectifier (IR) has introduced a series of 150-V and 200-V HEXFET power MOSFETs with ultra-low gate charge (Qg) for industrial applications (Fig. 1). The MOSFETs feature typical Qg values of 26 nC for the 150-V devices and 25 nC for the 200-V devices (Table). Comparisons of specifications for IR’s D2PAK devices shows that IR’s 150-V MOSFETs achieve 32% lower Qg than the next closest competitor, while IR’s 200-V MOSFETs achieve 22% lower Qg than the next closest competitor (Fig 2).

Target applications include switched-mode power supplies for telecom applications in which the MOSFETs may serve as a primary-side switch within isolated dc-dc converters. Other uses are found in uninterruptable power supplies, inverters, and dc motor drives. With TO-220 packaging, pricing begins at $0.83 each for the 150-V device and $0.82 each for the 200-V device in 10,000-unit quantities.

Fig 1. Optimized for low gate charge (Qg), IR’s 150-V and 200-V HEXFET
power MOSFETs are offered in D2PAK, DPAK, and TO-220 packages.

Table. Key specifications for 150-V and 200-V MOSFETs.

(a)

(b)

Fig 2a-b. IR’s 150-V and 200-V HEXFET MOSFETs achieve lower Qg values than competing units with comparable (approximately the same or higher) levels of RDSON. Data shown here is for units in D2PAK packages. All Qg values are typical and were taken at 25°C. Note that these may not be exact comparisons because of differences in how vendors specify Qg and RDS(ON). VGS=10V is common to all measurements, but ID and VDS values vary from vendor to vendor.